SSM6J501NU ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 8.5 ..
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SSM6J501NU
Small-signal MOSFET
SSM6J501NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ)
SSM6J501NU Power Management Switch Applications • 1.5V drive Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 19.0 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 15.3 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View) Equivalent Circuit(Top View) Pin Condition(Top View) Unit: mm
Weight: 8.5 mg (typ.) 3 6
Polarity marking Polarity marking (on the top)
*Electrodes : on the bottom 2 46 3 2 4 6
Drain Source
