SSM6J206FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = - ..
SSM6J207FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM6J212FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM6J213FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM6J214FE ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -30 V ..
SSM6J21TU , High Current Switching Applications
STB70NFS03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB70NFS03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Dain-source Voltage (V = 0) 30 VDS GSV Drain-g ..
STB70NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB7101 ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value Unit oV Supply voltage 4.5 Vcc T = +25 C ..
STB7101TR ,0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIERapplications43 4 3(0.9/1.9GHz), uses a 20 GHz F silicon bipolarTprocess. This IC is a wide range am ..
STB7102TR ,0.1/2.5 GHZ SI MMIC BUFFER AMPLIFIERABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Value UnitVSupply voltage 3.3 VccoTStorage tem ..
SSM6J206FE
Small-signal MOSFET
SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J206FE Power Management Switch Applications High-Speed Switching Applications 1.8 V drive
• Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V)
Ron = 186 mΩ (max) (@VGS = -2.5 V)
Ron = 130 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 3 mg (typ.)
