SSM6J06FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management ..
SSM6J07FU ,Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch Unit: ..
SSM6J08FU ,Field Effect TransistorSSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power ..
SSM6J205FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. MaxUnitV I ..
SSM6J206FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = - ..
SSM6J207FE ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
STB70NF02LT4 ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB70NF03L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB70NF03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB70NF3LLT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB70NFS03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB70NFS03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Dain-source Voltage (V = 0) 30 VDS GSV Drain-g ..
SSM6J06FU
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
SSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU Power Management Switch
High Speed Switching Applications Small package Low on resistance : Ron = 0.5 Ω max (VGS = −4 V) : Ron = 0.7 Ω max (VGS = −2.5 V) Low gate threshold voltage
Maximum Ratings (Ta ��� � 25°C)
Note 1: Mounted on FR4 board.
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 0.32 mm2 � 6) Figure 1.
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6.8 mg (typ.)
