SSM5N15FU ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition Min Typ ..
SSM5N16FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM5N16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM5P15FE ,Small-signal MOSFET 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN TYP ..
SSM6E01TU ,Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) Load Switch Applicationsfeatures low R and low-voltage operation DS (ON) Q1 Maximum Ratings (Ta 25°C)Characteristics ..
SSM6J06FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management ..
STB6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
STB6NC60-1 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NC60T4 ,N-CHANNEL 600V 1.0 OHMELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK60Z - STP6NK60ZFPSTB6NK60Z - STB6NK60Z-12 2N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D PAK/I P ..
STB6NK60Z-1 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB6NK60ZT4 ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
SSM5N15FU
Small-signal MOSFET 2 in 1
SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FU High Speed Switching Applications
Analog Switch Applications Small package Low ON resistance : RDS (ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS (ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating,
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 6 mg (typ.)
5 4
1 2 3
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