SSM5H05TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H07TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H08TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5H16TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM5H90TU ,Multi-chip discrete device (N-ch + switching diode)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM5N05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.8 Ω (max) (@V = 4 V) on GS : ..
STB6100 ,STB6100 databriefapplications. The STB6100 is controlled by a simple two wireinterface and has been designed to mini ..
STB6100 ,STB6100 databriefapplications such as high definition TV andbroadband internet.Figure 2. Integrated silicon tuner3 3 ..
STB6100/ ,STB6100 databriefSTB61008PSK/QPSK direct conversion tuner ICDATA BRIEFDESCRIPTION Packaged in a small QFN 32-pin pac ..
STB6NA60 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTB6NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTB6NA60 600 V < ..
STB6NB50T4 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB6NB50®N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAKPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB6NB ..
STB6NC60 ,N-CHANNEL 600V 1.0 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC60(-1) STP6NC60FPV Drain-source Voltage ..
SSM5H05TU
Multi-chip discrete device (N-ch + SBD)
SSM5H05TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H05TU DC-DC Converter • Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width is limited by max channel temperature.
Note 3: The operating temperature is limited by max channel temperature and max junction temperature.
Unit: mm
Weight: 7 mg (typ.)
