SSM5G01TU ,Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and CamcordersSSM5G01TU Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode SSM5G01TU ..
SSM5G02TU ,Multi-chip discrete device (P-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5G04TU ,Multi-chip discrete device (P-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5G09TU ,Multi-chip discrete device (P-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
SSM5G10TU ,Multi-chip discrete device (P-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM5H01TU ,Multi-chip discrete device (N-ch + SBD)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate ..
STB60NF06LT4 ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB60NF06L STP60NF06LFPSTP60NF06LV Drain-source ..
STB60NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STB60NH02LT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB6100 ,STB6100 databriefapplications. The STB6100 is controlled by a simple two wireinterface and has been designed to mini ..
STB6100 ,STB6100 databriefapplications such as high definition TV andbroadband internet.Figure 2. Integrated silicon tuner3 3 ..
STB6100/ ,STB6100 databriefSTB61008PSK/QPSK direct conversion tuner ICDATA BRIEFDESCRIPTION Packaged in a small QFN 32-pin pac ..
SSM5G01TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
SSM5G01TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode
SSM5G01TU DC-DC Converter for DSCs and Camcorders Co-packaged Pch MOSFET and Schottky Diode. Low RDS (ON) and Low VF
Maximum Ratings (Ta ��� � 25°C)
Maximum Ratings (Ta ��� � 25°C) SCHOTTKY DIODE Tj 125
Maximum Ratings (Ta ��� � 25°C) MOSFET, DIODE COMMON
Note 1: Mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
Unit: mm
Weight: 7 mg (typ.)
