SSM3K43FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K44FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitGate l ..
SSM3K44MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K48FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I ..
SSM3K7002BFS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ MaxUnitGate l ..
SSM3K7002BFU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ MaxUnitGate le ..
STB45NF3LLT4 ,N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFETSTP45NF3LL - STP45NF3LLFPSTB45NF3LL2N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D PAKSTripFET I ..
STB4NK60Z ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB4NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP4NK60ZSTD4NK60ZSTB4NK60Z STP4NK60ZFPSTD4NK60Z ..
STB50NE08 ,N
STB50NE10L-T4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 100 VV Drain ..
STB55NE06 ,N
SSM3K43FS
Small-signal MOSFET
SSM3K43FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K43FS High-Speed Switching Applications
• 1.5-V drive Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5V)
: Ron = 1.14 Ω (max) (@VGS = 1.8V)
: Ron = 0.85 Ω (max) (@VGS = 2.5V)
: Ron = 0.66 Ω (max) (@VGS = 4.5V)
: Ron = 0.63 Ω (max) (@VGS = 5.0V)
Absolute Maximum Ratings (Ta = 25 °C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, 0.36 mm2 ×3)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 2.4mg (typ.)
1 2
1 2
