SSM3K316T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage V 30 V ..
SSM3K320T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) １Characteristic Symbol Rating Unit ２３Drain-Source voltage V 30 ..
SSM3K35MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitGate le ..
SSM3K36FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K36MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3K36TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
STB3NK60ZT4 ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STB40NF10 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB40NF10T4 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB40NF10T4 ,N-CHANNEL 100VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTB40NF10T4 100 V < 0.028 Ω 50 A
SSM3K316T
Small-signal MOSFET
SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K316T Power Management Switch Applications
High-Speed Switching Applications
• 1.8-V drive • Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V)
Ron = 87 mΩ (max) (@VGS = 2.5 V)
Ron = 65 mΩ (max) (@VGS = 4.5 V)
Ron = 53 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The Junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 10 mg (typ.)
