SSM3K16FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K16TE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance : ..
SSM3K16TE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switc ..
SSM3K17FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsSSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switc ..
SSM3K301T ,Small-signal MOSFETabsolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon revie ..
SSM3K301T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit V 20 V Drain-Source voltag ..
STB30NF10 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF10T4 ,N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTB30NF10 STP30NF10FPSTP30NF10V Drain-source Vol ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STB30NF20 ,N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFETapplicationsDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET pr ..
STB30NS15 ,N-CHANNEL 150VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
SSM3K16FV
Small-signal MOSFET
SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FV High Speed Switching Applications
Analog Switch Applications Suitable for high-density mounting due to compact package Low on-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
nit: mm
Weight: 0.0015 g (typ.)
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