SSM3K15FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K15TE , High Speed Switching Applications
SSM3K16CT ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
SSM3K16FS ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM3K16FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications Suitable for high-density mounting due to compact package Low on resistance: ..
SSM3K16FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
STB25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETFeatures Figure 1: Package TYPE VDSS R IDS(on) D(@Tjmax)STB25NM60N-1 650 V < 0.170 Ω 20 ASTF25NM60 ..
STB25NM60N-1 ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETAPPLICATIONSThe MDmesh™ II family is very suitable for in-crease the power density of high voltage ..
STB25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK packageElectrical characteristics(T =25 °C unless otherwise specified).CASETable 5. On/off statesValueSymb ..
STB28NM50N ,N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesSymbol Para ..
STB3015L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STB30NE06L ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
SSM3K15FV
Small-signal MOSFET
SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FV High Speed Switching Applications
Analog Switch Applications Optimum for high-density mounting in small packages
• Low on-resistance
: RDS(ON) = 4.0 Ω (max) (@VGS = 4 V)
: RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
Unit: mm
Weight: 1.5 mg (typ.)
1 2
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