SSM3K119TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K121TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K123TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K124TU ,Small-signal MOSFET
SSM3K127TU ,Small-signal MOSFET
SSM3K12T ,Field Effect Transistor Silicon N Channel MOS Type/Category DC-DC Converter High Speed Switching Applications
STB200NF04T4 ,N-CHANNEL 40VAbsolute Maximum ratings Symbol Parameter Value UnitV Drain-source Voltage (V = 0) 40 VDS GSV Drai ..
STB20NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB20NK50Z-S ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)500 VDS GSV Drain-g ..
STB20NK50ZT4 ,N-CHANNEL 500VSTP20NK50Z - STW20NK50ZSTB20NK50Z - STB20NK50Z-S2 2N-CHANNEL 500V -0.23Ω - 17A TO-220/D PAK/I SPAK/ ..
STB20NM50FD ,N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB20NM50T4 ,N-CHANNEL 550V @ TjmaxELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
SSM3K119TU
Small-signal MOSFET
SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K119TU Power Management Switch Applications
High Speed Switching Applications • 1.8 V drive
• Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V)
Ron = 90 mΩ (max) (@VGS = 2.5V)
Ron = 74 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 6.6 mg (typ.)
