SSM3K104TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K116TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM3K119TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K121TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K123TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K124TU ,Small-signal MOSFET
STB19NF20 ,N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/D²PAK TO-220FPV Drain-source voltage 200 V ..
STB200NF03 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF04 ,N-CHANNEL 40VFeatures Figure 1: PackageType V R I PwDSS DS(on) DSTB200NF04 40 V < 0.0037 Ω 120 A 310 WSTB200NF04 ..
STB200NF04T4 ,N-CHANNEL 40VAbsolute Maximum ratings Symbol Parameter Value UnitV Drain-source Voltage (V = 0) 40 VDS GSV Drai ..
STB20NK50Z ,N-CHANNEL 500VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
SSM3K104TU
Small-signal MOSFET
SSM3K104TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K104TU Power Management Switch Applications
High-Speed Switching Applications • 1.8 V drive
• Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V)
Ron = 74 mΩ (max) (@VGS = 2.5 V)
Ron = 56 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Note 3: Pulse test
Unit: mm
Weight: 6.6 mg (typ.)
Unit: mm
