SSM3K09FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.7 Ω (max) (@V = 10 V) on GS ..
SSM3K104TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K116TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM3K119TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K121TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
SSM3K123TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
STB190NF04T4 ,N-CHANNEL 40VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB19NB20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STB19NF20 ,N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in D2PAK packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/D²PAK TO-220FPV Drain-source voltage 200 V ..
STB200NF03 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB200NF04 ,N-CHANNEL 40VFeatures Figure 1: PackageType V R I PwDSS DS(on) DSTB200NF04 40 V < 0.0037 Ω 120 A 310 WSTB200NF04 ..
SSM3K09FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU High Speed Switching Applications Small package Low on resistance
: Ron = 0.7 Ω (max) (@VGS = 10 V)
: Ron = 1.2 Ω (max) (@VGS = 4 V)
Maximum Ratings (Ta ��� � 25°C)
Note1: Mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu Pad: 0.6 mm2 � 3) Figure 1.
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 0.006 g (typ.)
1 2
1 2
Figure 1: 25.4 mm ��� � 25.4 mm ��� � 1.6 t,
Cu Pad: 0.6 mm2 ���� 3
