SSM3K05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switc ..
SSM3K09FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.7 Ω (max) (@V = 10 V) on GS ..
SSM3K104TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K116TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM3K119TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = ..
SSM3K121TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristics Symbol Rating Unit 32Drain-Source voltage V 2 ..
STB16PF06LT4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB170NF04 ,N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK packageElectrical characteristics(T =25°C unless otherwise specified).CASETable 4. On/offSymbol Parameter ..
STB18NF25 ,N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D2PAK packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
STB190NF04 ,N-CHANNEL 40VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 40 VV Drain- ..
STB190NF04T4 ,N-CHANNEL 40VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB19NB20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
SSM3K05FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU High Speed Switching Applications Small package Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage
Maximum Ratings (Ta ��� � 25°C)
Note 1: Mounted on FR4 board.
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 0.6 mm2 � 3)
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Unit: mm
Weight: 0.006 g (typ.)
