SSM3K04FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm With built-in gate-source resistor: R = 1 MΩ (typ.) GS 2.5 V gate driv ..
SSM3K04FV , High Speed Switching Applications
SSM3K04FV , High Speed Switching Applications
SSM3K05FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switc ..
SSM3K09FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 0.7 Ω (max) (@V = 10 V) on GS ..
SSM3K104TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitV I = ..
STB16NS25 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16NS25T4 ,N-CHANNEL 250VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 250 VDS GSV Drain- ..
STB16PF06L ,P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STB16PF06LT4 ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STB170NF04 ,N-channel 40 V, 4.4 mOhm typ., 80 A STripFET(TM) II Power MOSFET in a D2PAK packageElectrical characteristics(T =25°C unless otherwise specified).CASETable 4. On/offSymbol Parameter ..
STB18NF25 ,N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D2PAK packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
SSM3K04FU
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FU High Speed Switch Applications With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Equivalent Circuit Unit: mm
Weight: 0.006 g (typ.)
