SSM3K01T ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small Package Low on Resistance : R = 120 mΩ (max) (@V = 4 V) on GS ..
SSM3K02F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : R = 200 mΩ (max) (V = 4 V) on GS : ..
ssm3k02f ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsSSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switchi ..
SSM3K02T , High Speed Switching Applications
SSM3K03FE ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications 2.5 V gate drive High input impedance Low gate threshold voltage: V = 0.7~ ..
SSM3K04FS ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm With built-in gate-source resistor: R = 1 MΩ (typ.) GS 2.5 V gate driv ..
STB15NK50Z ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
STB15NK50ZT4 ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
STB160N75F3 ,N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 75 VDS GSV Gate-s ..
STB160NF3LLT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB16NB25 , N - CHANNEL 250V - 0.220ohm - 16A - TO-263 PowerMESH] MOSFET
STB16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
SSM3K01T
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T High Speed Switching Applications Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V , ID = 0.1 mA)
Maximum Ratings (Ta ��� � 25°C)
Note1: Mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 645 mm2 , t � 10 s)
Note2: The pulse width limited by max channel temperature.
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
Unit: mm
Weight: 10 mg (typ.)
