SSM3J332R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-Source voltage ..
SSM3J334R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 0.95 0.95Characteristic Symbol Rating Unit 2.9±0.2ADrain-Sourc ..
SSM3J35FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitGate le ..
SSM3J36MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
SSM3J56MFV ,Small-signal MOSFETabsolute maximum ratings. Weight: 1.5mg (typ.) Please design the appropriate reliability upon revie ..
SSM3K01F ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching ApplicationsApplications Unit: mm Small package Low on resistance : Ron = 120 mΩ (max) (V = 4 V) GS : ..
STB14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP14NK50Z/FP, STB14NK50ZSTB14NK50Z-1, STW14NK50Z2 2N-CHANNEL500V-0.34Ω-14ATO-220/FP/D PAK/I PAK/TO ..
STB14NK50Z-1 ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP14NK50ZSTP14NK50ZFP STW14NK50ZSTB14NK50Z/-1V ..
STB14NK60Z ,N-CHANNEL 600VSTP14NK60Z - STP14NK60ZFPSTB14NK60Z - STB14NK60Z-1 - STW14NK60Z2 2N-CHANNEL 600V-0.45Ω-13.5A TO-220 ..
STB14NK60ZT4 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB150NF55 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
STB150NF55T4 ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 55 VV Drain- ..
SSM3J332R
Small-signal MOSFET
SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J332R ○Power Management Switch Applications • 1.8-V drive
• Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: PW ≤ 10μs,Duty ≤ 1%
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking Equivalent Circuit (Top View) Unit: mm
Weight: 11 mg (typ.)
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