SSM3J327R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-source voltage ..
SSM3J328R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 0.95 0.95Characteristic Symbol Rating Unit 2.9±0.2ADrain-sourc ..
SSM3J332R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-Source voltage ..
SSM3J334R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 0.95 0.95Characteristic Symbol Rating Unit 2.9±0.2ADrain-Sourc ..
SSM3J35FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitGate le ..
SSM3J36MFV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max UnitV I ..
STB13NK60Z-1 ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB13NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP13NK60ZSTB13NK60Z/-1 STP13NK60ZFPSTW13NK60ZV ..
STB140NF75 ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 75 VDS GSV Drain- ..
STB141NF55 , N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
STB14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP14NK50Z/FP, STB14NK50ZSTB14NK50Z-1, STW14NK50Z2 2N-CHANNEL500V-0.34Ω-14ATO-220/FP/D PAK/I PAK/TO ..
STB14NK50Z-1 ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP14NK50ZSTP14NK50ZFP STW14NK50ZSTB14NK50Z/-1V ..
SSM3J327R
Small-signal MOSFET
SSM3J327R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J327R Power Management Switch Applications • 1.5-V drive
• Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Marking (Top View) Equivalent Circuit Unit: mm
Weight: 11 mg (typ.)
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