SSM3J321T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
SSM3J325F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM3J326T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit V -30 V Drain-source volta ..
SSM3J327F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J327R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 2.9±0.2ACharacteristic Symbol Rating Unit Drain-source voltage ..
SSM3J328R ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 0.95 0.95Characteristic Symbol Rating Unit 2.9±0.2ADrain-sourc ..
STB13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSST13005STB13005-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ MEDIUM VOLTAGE CAPABILITY ■ NPN ..
STB130NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB130NS04ZBT4 ,N-CHANNEL CLAMPEDAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) CLAMPED VDS GSVDr ..
STB13NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STB13NK60Z-1 ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STB13NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP13NK60ZSTB13NK60Z/-1 STP13NK60ZFPSTW13NK60ZV ..
SSM3J321T
Small-signal MOSFET
SSM3J321T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM3J321T Power Management Switch Applications High-Speed Switching Applications • 1.5V drive Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V)
Ron = 88mΩ (max) (@VGS = -1.8 V)
Ron = 62mΩ (max) (@VGS = -2.5 V)
Ron = 46mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 10mg (typ.)
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