SSM3J306T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V −30 V ..
SSM3J307T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J314T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) １２３Characteristic Symbol Rating Unit Drain-Source voltage V -3 ..
SSM3J321T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
SSM3J325F ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V ..
SSM3J326T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit V -30 V Drain-source volta ..
STB12NM50FDT4 ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STB12NM50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)12NM50(-1) STP12NM50FPV Drain-source Volta ..
STB13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSST13005STB13005-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ MEDIUM VOLTAGE CAPABILITY ■ NPN ..
STB130NH02L ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STB130NS04ZBT4 ,N-CHANNEL CLAMPEDAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) CLAMPED VDS GSVDr ..
STB13NK60Z ,N-CHANNEL 600VAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
SSM3J306T
Small-signal MOSFET
SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J306T Power management switch Applications • 4 V drive
• Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V)
Ron = 117 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C) Note 2: Pulse test
Unit: mm
Weight: 10 mg (typ.)
