SSM3J304T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM3J305T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA ― Tosh ..
SSM3J306T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V −30 V ..
SSM3J307T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J314T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) １２３Characteristic Symbol Rating Unit Drain-Source voltage V -3 ..
SSM3J321T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) ２３Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
STB12NK80Z ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB12NK80ZT4 ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STB12NM50 ,N-CHANNEL 500VSTP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-12 2N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D PAK/I PAK ..
STB12NM50FDT4 ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STB12NM50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)12NM50(-1) STP12NM50FPV Drain-source Volta ..
STB13005 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSST13005STB13005-1®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS■ MEDIUM VOLTAGE CAPABILITY ■ NPN ..
SSM3J304T
Small-signal MOSFET
SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J304T Power Management Switch Applications High-Speed Switching Applications • 1.8-V drive
• Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 10 mg (typ.) 2 2
