SSM3J16FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J16FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J304T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
SSM3J305T ,Small-signal MOSFETabsolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA ― Tosh ..
SSM3J306T ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage V −30 V ..
STB120NH03LT4 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STB12NK80Z ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STB12NK80ZT4 ,N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)800 VDS GSV Drain-g ..
STB12NM50 ,N-CHANNEL 500VSTP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-12 2N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D PAK/I PAK ..
STB12NM50FDT4 ,N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitTO-220 / TO-220FP TO-2472 2D PAK / I PAKV Drain- ..
STB12NM50T4 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)12NM50(-1) STP12NM50FPV Drain-source Volta ..
SSM3J16FS
Small-signal MOSFET
SSM3J16FS
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM3J16FS High Speed Switching Applications
Analog Switch Applications Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V)
: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
: RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking Equivalent Circuit (top view)
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 2.4 mg (typ.)
1 2
