SSM3J14T ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC ConvertersSSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Ma ..
SSM3J15F ,Small-signal MOSFETabsolute maximum ratings. Weight: 0.012g(typ.) Please design the appropriate reliability upon revie ..
SSM3J15F ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J15FS ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J15FU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN. TYP. MAX.UNITGate ..
SSM3J15FV ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIN TYP. MAXUNITGate le ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
STB11NM60 ,N-CHANNEL 600VSTP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-12 2N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D PAK/I ..
STB11NM60-1 ,N-CHANNEL 600VAPPLICATIONSThe MDmesh™ family is very suitable for increasingpower density of high voltage convert ..
STB11NM60A-1 ,N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60ASTP11NM60AFPSTB11NM60A-1V Drain-source ..
STB11NM60FD ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60FD STP11NM60FDFPSTB11NM60FDSTB11NM60FD- ..
SSM3J14T
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J14T Power Management Switch
DC-DC Converters Suitable for high-density mounting due to compact package Low on Resistance : Ron = 145 mΩ (max) (@VGS = −4.5 V) : Ron = 85 mΩ (max) (@VGS = −10 V) High-speed switching
Maximum Ratings (Ta ��� � 25°C)
Note 1: Mounted on FR4 board (25.4 mm � 25.4 mm � 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by maximum channel temperature.
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account
Unit: mm
Weight: 10 mg (typ.)
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