SSM3J130TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 32Drain-Source voltage V -20 ..
SSM3J134TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J135TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J13T ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching ApplicationsApplications Small Package Low on Resistance : R = 70 mΩ (max) (@V = −4 V) on GS : R = 95 ..
SSM3J14T ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC ConvertersSSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Ma ..
SSM3J15F ,Small-signal MOSFETabsolute maximum ratings. Weight: 0.012g(typ.) Please design the appropriate reliability upon revie ..
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
STB11NM60 ,N-CHANNEL 600VSTP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-12 2N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D PAK/I ..
SSM3J130TU
Small-signal MOSFET
SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J130TU Power Management Switch Applications 1.5 V drive
• Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 6.6 mg (typ.) 2 2
