SSM3J129TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 32Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
SSM3J130TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 32Drain-Source voltage V -20 ..
SSM3J134TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J135TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J13T ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching ApplicationsApplications Small Package Low on Resistance : R = 70 mΩ (max) (@V = −4 V) on GS : R = 95 ..
SSM3J14T ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC ConvertersSSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM3J14T Power Ma ..
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
SSM3J129TU
Small-signal MOSFET
SSM3J129TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)
SSM3J129TU Power Management Switch Applications High-Speed Switching Applications 1.5 V drive
• Low ON-resistance Ron = 137mΩ (max) (@VGS = -1.5 V)
Ron = 88mΩ (max) (@VGS = -1.8 V)
Ron = 62mΩ (max) (@VGS = -2.5 V)
Ron = 46mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 6.6mg (typ.)
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