SSM3J120TU ,Small-signal MOSFETabsolute maximum ratings. Weight: 6.6mg (typ.) Please design the appropriate reliability upon revie ..
SSM3J129TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 32Characteristic Symbol Rating Unit Drain-Source voltage V -20 ..
SSM3J130TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 32Drain-Source voltage V -20 ..
SSM3J134TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J135TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V ..
SSM3J13T ,Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching ApplicationsApplications Small Package Low on Resistance : R = 70 mΩ (max) (@V = −4 V) on GS : R = 95 ..
STB1188 , PNP Silicon Transistor
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
SSM3J120TU
Small-signal MOSFET
SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J120TU Power Management Switch Applications High-Current Switching Applications • 1.5 V drive • Low on-resistance
Ron = 140 mΩ (max) (@VGS = -1.5 V)
Ron = 78 mΩ (max) (@VGS = -1.8 V)
Ron = 49 mΩ (max) (@VGS = -2.5 V)
Ron = 38 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )
Note 2 : Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 6.6mg (typ.) 2 2
