SSM3J109TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = - ..
SSM3J110TU , Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
SSM3J112TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1Drain-Source voltage V −30 ..
SSM3J113TU ,Small-signal MOSFETAbsolute Maximum Ratings (Ta = 25°C) 1Characteristic Symbol Rating Unit 32Drain-Source voltage V −2 ..
SSM3J115TU ,Small-signal MOSFETApplications Unit: mm 2.1±0.1• 1.5 V drive • Low ON-resistance: R = 353 mΩ (max) (@V = −1.5 V) 1.7 ..
SSM3J120TU ,Small-signal MOSFETabsolute maximum ratings. Weight: 6.6mg (typ.) Please design the appropriate reliability upon revie ..
STB1188 , PNP Silicon Transistor
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
SSM3J109TU
Small-signal MOSFET
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU Power Management Switch Applications High-Speed Switching Applications 1.8 V drive
• Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V)
Ron = 172 mΩ (max) (@VGS = -2.5 V)
Ron = 130 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2) Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C) Note 3: Pulse test
Unit: mm
Weight: 6.6 mg (typ.)
