SSM3J02T ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Component package suitable for high-density mounting Small Package Low ON ..
SSM3J05FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management ..
SSM3J09FU ,Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching ApplicationsSSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switc ..
SSM3J108TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
SSM3J109TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitV I = - ..
SSM3J110TU , Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
STB1188 , PNP Silicon Transistor
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
SSM3J02T
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T Power Management Switch
High Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low-voltage operation possible
Maximum Ratings (Ta ��� � 25°C)
Note1: Mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 645 mm2, t � 10 s)
Note2: The pulse width limited by max channel temperature.
Marking Equivalent Circuit
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
Weight: 10 mg (typ.)
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