SSM3J01T ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Small Package Low on Resistance : R = 0.4 Ω (max) (@V = −4 V) on GS : R = 0. ..
SSM3J02F ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Small package Low on resistance : R = 0.5 Ω (max) (@V = −4 V) on GS : R = 0. ..
SSM3J02T ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsApplications Component package suitable for high-density mounting Small Package Low ON ..
SSM3J05FU ,Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching ApplicationsSSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management ..
SSM3J09FU ,Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching ApplicationsSSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switc ..
SSM3J108TU ,Small-signal MOSFETElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. MaxUnitV I = ..
STB1188 , PNP Silicon Transistor
STB1188 , PNP Silicon Transistor
STB11NB40 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTB11NB40 400 V < 0.55 ..
STB11NB40T4 ,N-CHANNEL 400VAbsolute Maximum RatingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 400 VDS GSV Drain ..
STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
SSM3J01T
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01T Power Management Switch
High Speed Switching Applications Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage
Maximum Ratings (Ta ��� � 25°C)
Note 1: Mounted on FR4 board
(25.4 mm � 25.4 mm � 1.6 t, Cu pad: 645 mm2 , t � 10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account.
Marking Equivalent Circuit Unit: mm
Weight: 10 mg (typ.)
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