SSM2220 ,Audio Dual Natched PNP transistorCHARACTERISTICS at r, = +25°C, unless otherwise noted.
SSM-2220
PARAMETER SYMBOL CONDITIONS MIN ..
SSM2220 ,Audio Dual Natched PNP transistorapplications.
The SSM-2220 also offers excellent matching of the current gain
(AhFE) to about 0 ..
SSM2220S ,Audio Dual Natched PNP transistorcharacteristics are guaranteed over the
extended industrial temperature range of -4ty'C to +85°C.
..
SSM2250 ,Mono 1.5 W/Stereo 250 mW Power AmplifierSpecifications subject to change without notice.–2– REV. 0SSM22501ABSOLUTE MAXIMUM RATINGS1Package ..
SSM2250RM ,Mono 1.5 W/Stereo 250 mW Power Amplifierapplications.BTL/SESWITCHINGCIRCUITRY SELECTThe SSM2250 is specified over the industrial (–40
SSM2220-SSM2220S
Audio Dual Natched PNP transistor
ANALOG
DEVICES
Audio Dual Matched
PNP Transistor
SSM-ZZZU
FEATURES
- Very Low Voltage Noise ............. @100Hz, ltW/v/ Hz Max
. High Gain Bandwidth ..................................... 190MHz Typ
. Excellent Gain ................................... @ lc =1mA, 165 Typ
. Tight Gain Matching B.............................................. 3% Max
. Outstanding Logarithmic Conformance... rBE = 0.39 Typ
. Low Offset Voltage ........................................... 200w Max
. Low Cost
APPLICATIONS
. Microphone Preamplifiers
q Tape-Head Preamplifiers
. Current Sources and Mirrors
. Low Noise Precision Instrumentation
. Voltage Controlled Amplifiers/Multipliers
ORDERING INFORMATION
OPERATING
TEMPERATURE
8.AN EPOXY MP 64NN SW RANGE
ssmzzop SSM2220S 40°C to 435°C
. For availability of SO package, contact your local sales office.
GENERAL DESCRIPTION
The SSM-2220 is a dual low noise matched PNP transistorwhich
has been optimized for use in audio applications.
The ultra-Iow input voltage noise of the SSM-2220 is typically
only 0.7nV/v/mverthe entire audio bandwidth of 20Hzto 20kHz.
The low noise, high bandwidth (1 90MHz), and Offset Voltage of
(20tNV Max) make the SSM-2220 an ideal choice for demand-
ing low noise preamplifier applications.
The SSM-2220 also offers excellent matching of the current gain
(AhFE) to about 0.5% which will help to reduce the high order
amplifier harmonicdistortion. In addition, to insure the long-term
stability of the matching parameters, internal protection diodes
across the base-emitter junction were used to clamp any reverse
base-emitter junction potential. This prevents a base-emitter
breakdown condition which can result in degradation of gain and
matching performance due to excessive breakdown current.
Another feature of the SSM-2220 is its very low bulk resistance
of 0.30 typically which assures accurate logarithmic conform-
The SSM-2220 is offered in 8-pin plastic, dual-in-line, and SO
and its performance and characteristics are guaranteed over the
extended industrial temperature range of -4ty'C to +85°C.
PIN CONNECTIONS
EPOXY DIP
(P-Suffix) _
8-PIN [I
(S-Suffix)
SSM-2220
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (Bvcao) ........................................ 36V
Collecttar-Emitter Voltage (Bvceo) ..................................... 36V
Collector-Collector Voltage (BVCC) .................................... 36V
Emitter-Emitter Voltage (BVEE) .......................................... 36V
Collector Current (IC) -..p-q.r..-qq....q...p-._..-..p.q....- 20mA
Emitter Current (IE) .......................................................... 20mA
Operating Temperature Range
SSM-2220P .................................................. -400C to +85°C
SSW2220S _................................................. -400C to +85°C
Operating Junction Temperature .................. -55°C to +150°C
Storage Temperature ............................ ... -65°C to +150°C
Lead Temperature (Soldering, 60 sec) ........................ +300°C
Junction Temperature ................................... -65''C to +150°C
PACKAGE TYPE N(Note1) 91c UNITS
8-Pin Plastic DIP (P) 103 43 ''C/W
8-Pin so (S) 158 43 JC/W
1 . N is specified forworst case mounting conditions,i.e.,9 A is specified fordevice
in socket for P-DIP package; N 1s specified for device soldered to pnntad
curcuit board for SO packages.
ELECTRICAL CHARACTERISTICS at TA = +25°C. unless otherwise noted.
SSM-2220
PARAMETER SYMBOL CONDI'UONS MIN TYP MAX UNITS
Va, " OV, -asv
Current Gain h |c " 1mA 80 165 -
(Note 1) FE IC -100p.A 70 150 -
IC = mm 60 120 -
Current Gain Matching
(Note 2) ME Ic " 100pA, Vas " OV - 0.5 5 V,
[Ci 1'tdcts = 0V 0 8 2
. _ = l - .
Noise Voltage Density e f " 100HI - 0.7 1 nV/v6Tz
(Note 3) N 0
f0 " 1kHz - 0.7 1
f0 " 10kHz - 0.7 1
Offset Voltage q
(Note 4) Vos va, = OV, 1c " oouA - 40 200 uv
I " 100M
Offset Voltage Change C -
vs. Collector Voltage AVOS/AVCB Vas, - 0V - 1 1 200 WV
Vcaz " -36V
Offset Voltage Change Vca " 0V -
vs. Collector Current AVOSIA'C le, = 1011A.lc2 = ltttA 12 75 “V
Offset Current los IC " 10011A,VCB . 0V - 6 45 nA
Collemor~Base
Leakage Current G, Vas " -36V " VW _ 50 400 pA
_ V " 0V
ca ' _
Bulk Resistance rise 10PA " s1mA O 3 0.75 n
Collector Saturation
Voltage Vcsisar) Ic " 1mA, IB " 100M - 0.026 0.1 v
NOTES:
1. Current gain is measured at collector-base voltages (Vca) swept from 0 to
VMAX at indicated collector current. Typicals are measured at Vca - OV.
2. Current gain matching (Ann) is defined as:
'100(A|5) hFE(MIN)
3. Sample tested. Noise tested and specified as equivalent input voltage for
each translstDr.
4. Offset voltage is definsd as:
Vos " V351 - Vasz'
where Vos is the differential voltage for
ICtt "02 :Vos *VBEi -WE2 "ET, In ‘E’
SSM-2220
ELECTRICAL CHARACTERISTICS at -40oC 3 TA 5 +85°C, unless otherwise noted.
SSM-2220
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
G, = 0V. -36V
IC = 1mA 60 120 -
Current Gain hrs r, = 100pA 50 105 -
lc =10pA 40 90 -
Offset Vohage Vos 'c =10thsA,Vci, = 0V - 30 265 _uV
ngevjihage Dnit ch05 IC = wouA. Va, = ov - 0.3 1 o w C
Offset Current los ic = 100PA. Vca = 0V - 10 200 nA
Breakdown Voltage BVCEO 36 - - V
l, Guaranteed by Vos test (TCVOS = VOS/Tior Vos << Vae)
where T = 298°K for T, = 25°C.
TYPICAL PERFORMANCE CHARACTERISTICS
NOISE FIGURE vs EMITTER-BASE
LOW FREQUENCY NOISE COLLECTOR CURRENT LOG CONFORMITY
E5 05 I
= V , .
Ita' 0.4 't =31:
"Ong 0.3 _
_ owo'tise''tN _ l
CV , I I I bt g. n, =1krl E "
-40rtV J K m
g 'l fi
g n, = Ioom| f, o
t , 2 Aht
m, 'i' ' I " , '
VERTICAL = an/olv , .4 .412
HORIZONTAL, wow _
as = mm Ah3
Ic:1mA AM
r. = .2sac g 1
0.001 0.01 0.1 I -0.s "e 10-7 10-6 10-5 IO " 10'
COLLECTOR CURRENT (mA) COLLECTOR CURRENT (Al
TOTAL NOISE " NOISE VOLTAGE DENSITY NOISE VOLTAGE DENSITY
m COLLECTOR CURRENT vs COLLECTOR CURRENT vs FREQUENCY
T l m , II [ld T I r
Ta =.as'tt _ n, a. , Ts = 25‘c r, =2s'c
vet * ov l A vc, * " . 1 vc. , "
200 l ts mu 4 i l gi
i" H 'rl/ii,, w”: / i s _ 2
I 1 l 4 _ E E
lt I i ii 1" 1 i 1 l I I ' ,
3'” ma ___") H. :t: w/ i
t Rs r. 100M2 1 i 1 i l . / I 1 3 ,
5.00 'l/i) i-cl'' i! 2 / 2
< 1 I l ; ' , l I- F-
tit ' , l l T K , I t _ t
_ l I ', 1 l w , I . w
I I Lit," i l g l Le..,.,,, 1oou/ g
COLLECTOR CURRENT (WA)
COLLECTOR CURRENT (MA)
l 10 100 u. 'oe ‘00-
FREQUENCY mzl
SSM-2220
TYPICAL PERFORMANCE CHARACTERISTICS Continued
CURRENT GAIN vs CURRENT GAIN GAIN BANDWIDTH "
COLLECTOR CURRENT " TEMPERATURE COLLECTOR CURRENT
700 I l I T I 1000
vc.=ov It: :ImA j T 3 nxzs'c
I m l L i ' , VCI'OV
1 1 ' . l / S
_ V” = 46v " g I00
A a m i ,
' é tk
i" 5 400 (1V ,
g g / t m
E w 100 l 5
g E / g
i', 8 200 vc. ' ov l 9
--e---"'"" I l i. ,
mo l I :a
1 l ! _, 1 j,
',, mo woo -ss -as ~15 s l- :5 as 3 In: as Mum om m 1 m we
COLLECTOR CURRENT INA) TEMPERATURECC) COLLECTOR cunnsmmm
SATURATION VOLTAGE BASE-EMITTER VOLTAGE COLLECTOR-BASE
" COLLECTOR CURRENT vs COLLECTOR CURRENT CAPACITANCE vs Veg
0.70 _ " I
TA=zs‘c ( I , l , , 1 I 1 l T. azs'c
0.65 l I _,, ‘ ,
at " , i I i
g m A 1 _ i _
i,"-, - h, 3tt l 1 f
g g (155 ‘“ 1 g I
'' g te,.. I i ) ,
a J tMo a 20 1 1 l , r
'a 8 l x _ I
E 015 i l _ i
, m t , I i
DAB 1 l 1 '; 1
k i l l
0.35 o i I i I i I
0.01 0.1 1 IO , " mo 1000 10000 o " -vo -IS -20 4: -30 45
COLLECTOR CURRENT (mA) COLLECTOR CURRENT (PA) COLLECTOR-BASE vouAaz (vous)
SMALL-SIGNAL INPUT SMALL-SIGNAL OUTPUT
RESISTANCE (hd " CONDUCTANCE (hoe) "
COLLECTOR CURRENT COLLECTOR CURRENT
" ' 25'C
‘ruzsc
VI. — SMALL-SIGNAL INPUY RESISYANCE (kn)
h.- - OUTPUT CONDUCTANCE (”mu")
COLLECTOR CURRENT (HA) COLLECTOR CURRENT 1M)
SSM-222l]
llHt—o
”H [—0
V’AA‘I‘A
1500 now!
SSM-2220 PAIRS;
LED 83n T 1W T 0.00NF
PULSE RESPONSE
3.23an
LOW FREQUENCY NOISE
iNiiulttsietsis m.
Av=1000
lGr--1nvoN
FIGURE la: Super Low Noise Amplifier
APPLICATIONS INFORMATION
SUPER LOW NOISE AMPLIFIER
The circuit in Figure 1a is a super low noise amplifier with
equivalent input voltage noise of th32nv/vTE. By paralleling
SSM-2220 matched pairs, a further reduction of amplifier noise
is attained by a reduction of the base spreading resistance by a
factor of 3, and consequently the noise byv/T. Additionally, the
shot noise contribution is reduced by maintaining a high coilec-
tor current (2mA/device) which reduces the dynamic emitter
resistance and decreases voltage noise. The voltage noise is
inversely proportional to the square root of the stage current, and
current noise increases proportionally to the square root of the
stage current. Accordingly, this amplifier capitalizes on voltage
noise reduction techniques at the expense of increasing the
current noise. However, high current noise is not usually impor-
tant when dealing with low impedance sources.
This amplifier exhibits excellent full power AC performance,
0.08%THD into a600f2 load, making itsuitable forexacting audio
applications (see Figure 1b).
TOTAL HARMONIC 045105110! ('5)
NO LOAD
i i _ i
FNEOUENCV (Hz)
FIGURE 1b: Super Low Noise Amplifier - Total Harmonic
Distortion
