SSI10N60BTU ,600V N-Channel B-FETFeaturesThese N-Channel enhancement mode power field effect • 9.0A, 600V, R = 0.8Ω @V = 10 VDS(on) ..
SSI2N80A , Advanced Power MOSFET
SSL0804HC-3R3M-S , SMD Unshielded Power Inductors
SSL0804HC-3R3M-S , SMD Unshielded Power Inductors
SSL1523AP ,Non-dimmable LED driver ICapplications4. Quick reference data Table 1. Quick reference dataSymbol Parameter Conditions Min Ty ..
SSL1523P ,Non-dimmable LED driver ICapplications4. Quick reference data Table 1. Quick reference dataSymbol Parameter Conditions Min Ty ..
STA401A. , NPN Darlington With built-in avalanche diode
STA402 , PNP Darlington General purpose
STA402 , PNP Darlington General purpose
STA406 , NPN Darlington With built-in avalanche diode
STA406A , NPN Darlington With built-in avalanche diode
STA406A , NPN Darlington With built-in avalanche diode
SSI10N60BTU-SSW10N60BTM
600V N-Channel B-FET
SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 600V, R = 0.8Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 54 nC) planar, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D SSW Series SSI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSW10N60B / SSI10N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 9.0 A D C - Continuous (T = 100°C) 5.7 A C I (Note 1) Drain Current - Pulsed 36 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 520 mJ AS I Avalanche Current (Note 1) 9.0 A AR E (Note 1) Repetitive Avalanche Energy 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 156 W C - Derate above 25°C 1.25 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.8 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
