SSH7N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.3A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
SSH7N90A ,N-Channel Power MosfetsFEATURESBV = 900VDSS• Avalanche Rugged TechnologyR = 1.8ΩDS(ON) Rugged Gate Oxide TechnologyI = 7A ..
SSH7N90A ,N-Channel Power MosfetsFEATURESBV = 900VDSS• Avalanche Rugged TechnologyR = 1.8ΩDS(ON) Rugged Gate Oxide TechnologyI = 7A ..
SSH7N90A ,N-Channel Power MosfetsN-CHANNEL POWER MOSFET SSH7N90A
SSH7N90A ,N-Channel Power MosfetsN-CHANNEL POWER MOSFET SSH7N90A
SSH9N80A , Advanced Power MOSFET
STA369BWS ,2.1-channel 40-W high-efficiency digital audio system Sound TerminalFeatures2with fast recall via I C interface Wide-range supply voltage, 4.5 V to 21.5 V Extended ..
STA369BWSTR ,2.1-channel 40-W high-efficiency digital audio system Sound TerminalSTA369BWS2.1-channel 40-watt high-efficiency digital audio system® Sound TerminalDatasheet - produc ..
STA400A ,V(cc: -0.5 to +4V; V(in/out): -0.5 to +0.5V; XMRADIO SDARS channel decoderSTA400AXMRADIO SDARS CHANNEL DECODERFRONT END INTERFACE■ TWO INTERNAL 10 BIT A/D CONVERTERS■ TWO Q ..
STA401A. , NPN Darlington With built-in avalanche diode
STA402 , PNP Darlington General purpose
STA402 , PNP Darlington General purpose
SSH7N60B
600V N-Channel MOSFET
SSH7N60B November 2001 SSH7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.3A, 600V, R = 1.2Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ! ! ! ! ! ! ! ! # # # # # # # # " " " " " " " " ! ! ! ! ! ! ! ! !!!!!!!! G ! ! ! ! ! ! ! ! !!!! !!!! TO-3P S SSH Series GS D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSH7N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 7.3 A D C - Continuous (T = 100°C) 4.6 A C I (Note 1) Drain Current - Pulsed 29.2 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 420 mJ AS I Avalanche Current (Note 1) 7.3 A AR E (Note 1) Repetitive Avalanche Energy 16 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 160 W D C - Derate above 25°C 1.28 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8! from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.78 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. B, November 2001
