SSH45N20B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 45A, 200V, R = 0.065Ω @V = 10 VDS(on) ..
SSH70N10A ,Advanced Power MOSFETSSH70N10AAdvanced Power MOSFET
SSH70N10A ,Advanced Power MOSFETFEATURESBV BV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.023DS(on) Rugged Gate Oxide ..
SSH7N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.3A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
SSH7N90A ,N-Channel Power MosfetsFEATURESBV = 900VDSS• Avalanche Rugged TechnologyR = 1.8ΩDS(ON) Rugged Gate Oxide TechnologyI = 7A ..
SSH7N90A ,N-Channel Power MosfetsFEATURESBV = 900VDSS• Avalanche Rugged TechnologyR = 1.8ΩDS(ON) Rugged Gate Oxide TechnologyI = 7A ..
STA339BW ,2.1-channel high-efficiency digital audio systemFeatures Automatic invalid input-detect mute2 Wide voltage supply range 2-channel I S input dat ..
STA339BWS ,2.1 channel high efficiency digital audio systemElectrical specifications for the power section . . . . . 143.6 Power on/off sequence . . . ..
STA339BWS13TR ,2.1 channel high efficiency digital audio systemFeatures Automatic invalid input-detect mute Wide-range supply voltage, 4.5 V to 21.5 V Up to ..
STA339BWS13TR ,2.1 channel high efficiency digital audio systemSTA339BWS2.1-channel 40-watt high-efficiency digital system® Sound TerminalDatasheet - production d ..
STA339BWTR ,2.1-channel high-efficiency digital audio systemSTA339BW2.1 channel high-efficiency digital audio systemDatasheet - production data Dedicated LFE ..
STA369BWS ,2.1-channel 40-W high-efficiency digital audio system Sound TerminalFeatures2with fast recall via I C interface Wide-range supply voltage, 4.5 V to 21.5 V Extended ..
SSH45N20B
200V N-Channel MOSFET
SSH45N20B November 2001 SSH45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 45A, 200V, R = 0.065Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 133 nC) planar, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● !!!! !!!! TO-3P S SSH Series GS D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSH45N20B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 45 A D C - Continuous (T = 100°C) 27.8 A C I (Note 1) Drain Current - Pulsed 180 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) 45 A AR E (Note 1) Repetitive Avalanche Energy 27.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 278 W D C - Derate above 25°C 2.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.45 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. C, November 2001
