SSH22N50A ,N-CHANNEL POWER MOSFETSSH22N50A$GYDQFHG 3RZHU 026)(7
SSH45N20B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 45A, 200V, R = 0.065Ω @V = 10 VDS(on) ..
SSH70N10A ,Advanced Power MOSFETSSH70N10AAdvanced Power MOSFET
SSH70N10A ,Advanced Power MOSFETFEATURESBV BV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.023DS(on) Rugged Gate Oxide ..
SSH7N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.3A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
SSH7N90A ,N-Channel Power MosfetsFEATURESBV = 900VDSS• Avalanche Rugged TechnologyR = 1.8ΩDS(ON) Rugged Gate Oxide TechnologyI = 7A ..
STA335ML ,2-channel microless high-efficiency digital audio system Sound TerminalFeatures PowerSSO-36 ■ Wide supply voltage range (5.0 V to 26 V)with exposed ■ PowerSSO-36 exposed ..
STA335W , 2.0-channel high-efficiency digital audio system
STA339BW ,2.1-channel high-efficiency digital audio systemFeatures Automatic invalid input-detect mute2 Wide voltage supply range 2-channel I S input dat ..
STA339BWS ,2.1 channel high efficiency digital audio systemElectrical specifications for the power section . . . . . 143.6 Power on/off sequence . . . ..
STA339BWS13TR ,2.1 channel high efficiency digital audio systemFeatures Automatic invalid input-detect mute Wide-range supply voltage, 4.5 V to 21.5 V Up to ..
STA339BWS13TR ,2.1 channel high efficiency digital audio systemSTA339BWS2.1-channel 40-watt high-efficiency digital system® Sound TerminalDatasheet - production d ..
SSH22N50A
N-CHANNEL POWER MOSFET
SSH22N50A♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10μA (Max.) @ VDS = 500V
♦ Lower RDS(ON): 0.197Ω (Typ.)
$GYDQFHG3RZHU026)(7
Thermal Resistance
FEATURES
Absolute Maximum Ratings©1999
Rev. B
