SSF7N60B ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.4A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
SSF9926 , PWM applications
SSGM120100 , Dual In-line Package Type Switches
SSGM140100 , Dual In-line Package Type Switches
SSGM140100 , Dual In-line Package Type Switches
SSGM160100 , Dual In-line Package Type Switches
STA308 ,MULTICHANNEL DIGITAL AUDIO PROCESSOR WITH DDXBLOCK DIAGRAM SA SCL MVOSDA OUT1A/B LRCKI 2OUT2A/B I C BICKI SERIAL OUT3A/B OVERSAMPLING SDI12 ..
STA308A ,Transistor Array For Source DriveELECTRICAL CHARACTERISTICSSymbol Parameter Test Condition Min. Typ. Max. Unit NoteI Low Level Input ..
STA308A13TR ,MULTICHANNEL DIGITAL AUDIO PROCESSOR with DDX"FEATURESFigure 1. Package■ 8 Channels of 24-bit DDX™ ■ >100dB SNR and Dynamic Range■ Selectable 32k ..
STA308A13TR ,MULTICHANNEL DIGITAL AUDIO PROCESSOR with DDX"BLOCK DIAGRAM SA SCL SDA MVO OUT1A/B LRCKI 2OUT2A/B I C BICKI SERIAL OUT3A/B OVERSAMPLING SDI12 ..
STA309A ,3-phase Motor Driver ArrayFeatures® 8 channels of 24-bit DDX (direct digital TQFP64amplification) >100 dB of SNR and dynami ..
STA309A13TR applications the additional 2 channels can be – Preset TV channel/commercial AGC mode used for audi ..
SSF7N60B
600V N-Channel MOSFET
SSF7N60B November 2001 SSF7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.4A, 600V, R = 1.2Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ! ! ! ! ! ! ! ! # # # # # # # # " " " " " " " " ! ! ! ! ! ! ! ! G!!!!!!!! ! ! ! ! ! ! ! ! TO-3PF GS D !!!!!!!! SSF Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSF7N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 5.4 A D C - Continuous (T = 100°C) 3.4 A C I (Note 1) Drain Current - Pulsed 21.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 420 mJ AS I Avalanche Current (Note 1) 5.4 A AR E (Note 1) Repetitive Avalanche Energy 8.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 86 W D C - Derate above 25°C 0.69 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8! from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.45 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. B, November 2001
