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SSF10N60B
600V N-Channel MOSFET
SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.9A, 600V, R = 0.8Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 54 nC) planar, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● !!!! G!!!! ● ● ● ● ● ● ● ● TO-3PF GS D SSF Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SSF10N60B Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 6.9 A D C - Continuous (T = 100°C) 4.3 A C I (Note 1) Drain Current - Pulsed 27.6 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 520 mJ AS I Avalanche Current (Note 1) 6.9 A AR E (Note 1) Repetitive Avalanche Energy 9.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 90 W D C - Derate above 25°C 0.72 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.38 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. B, November 2001
