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SS9018HBUFAIRCHILDN/a13700avaiNPN Epitaxial Silicon Transistor


SS9018HBU ,NPN Epitaxial Silicon TransistorSS9018SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner• High Current Gain Bandwidth Product ..
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SS9018HBU
NPN Epitaxial Silicon Transistor
SS9018 SS9018 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner • High Current Gain Bandwidth Product f =1.1 GHz (Typ) T TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 400 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =1.0mA, I =0 15 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 5 V EBO E C I Collector Cut-off Current V =12V, I =0 50 nA CBO CB E h Emitter Cut-off Current V =5V, I =1.0mA 28 100 198 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.5 V CE C B C Output Capacitance V =10V, I =0 1.3 1.7 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =5V, I =5mA 700 1100 MHz T CE C h Classification FE Classification D E F G H I h 28 ~ 45 39 ~ 60 54 ~ 80 72 ~ 108 97 ~ 146 132 ~ 198 FE ©2002 Rev. A4, November 2002
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