SS9015CBU ,PNP Epitaxial Silicon TransistorSS9015SS9015Low Frequency, Low Noise Amplifier• Complement to SS9014TO-9211. Emitter 2. Base 3. ..
SS9018 ,NPN Epitaxial Silicon TransistorSS9018SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner• High Current Gain Bandwidth Product ..
SS9018HBU ,NPN Epitaxial Silicon TransistorSS9018SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner• High Current Gain Bandwidth Product ..
SS94A2 , LINEAR OUTPUT HALL EFFECT TRANSDUCER
SSA23L ,High-Current Density Surface Mount Schottky Rectifier Forward Current 2.0 A, Reverse Voltage 30 and 40 V02-Apr-04 1SSA23L and SSA24Vishay Semiconductorsformerly General SemiconductorRatings and Character ..
SSA33L ,High-Current Density Surface Mount Schottky Rectifier, Forward Current 3.0A, Reverse Voltage 30 and 40VThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbol SSA33L SSA34 UnitDevice ..
ST92195B5B1 ,32-64K ROM HCMOS MCU WITH ON-SCREEN-DISPLAY AND TELETEXT DATA SLICERST92195B32-64K ROM HCMOS MCU WITHON-SCREEN-DISPLAY AND TELETEXT DATA SLICERDATA BRIEFINGn Register ..
ST92195C7T1 , 48-96 Kbyte ROM HCMOS MCU WITH ON-SCREEN DISPLAY AND TELETEXT DATA SLICER
ST92F120V1Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDST92F1208/16-BIT FLASH MCU FAMILYWITH RAM, EEPROM AND J1850 BLPDDATASHEET■ Memories– Internal Memor ..
ST92F120V1Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDapplications that require regular up-and low voltage operation for power-efficient anddates of sing ..
ST92F120V9Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDTable of Contents7.1 INTRODUCTION 947.2 CLOCK CONTROL UNIT . . 947.3 CLOCK MANAGEMENT ..
ST92F124R9T6 ,8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD
SS9015CBU
PNP Epitaxial Silicon Transistor
SS9015 SS9015 Low Frequency, Low Noise Amplifier • Complement to SS9014 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 450 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -45 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -50V, I =0 -50 nA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -50 nA EBO EB C h DC Current Gain V = -5V, I = -1mA 60 1000 FE CE C V (sat) Collector-Base Saturation Voltage I = -100mA, I = -5mA -0.7 CE C B V (sat) Base-Emitter Saturation Voltage I = -100mA, I = -5mA -1.0 V BE C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -0.6 -0.75 V BE CE C C Output Capacitance V = -10V, I =0 4.5 7.0 pF ob CB E f=1MHz f Current Gain Bandwidth Product V = -5V, I = -10mA 100 190 MHz T CE C NF Noise Figure V = -5V, I = -0.2mA 0.7 10 dB CE C f=1KHz, R =1KΩ S h Classification FE Classification A B C D h 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 FE ©2002 Rev. B2, November 2002
