SS9014BBU ,NPN Epitaxial Silicon TransistorSS9014SS9014Pre-Amplifier, Low Level & Low Noise• High total power dissipation. (P =450mW)T• High h ..
SS9014CBU ,NPN Epitaxial Silicon TransistorSS9014SS9014Pre-Amplifier, Low Level & Low Noise• High total power dissipation. (P =450mW)T• High h ..
SS9014D , Pre-Amplifier, Low Level & Low Noise
SS9015CBU ,PNP Epitaxial Silicon TransistorSS9015SS9015Low Frequency, Low Noise Amplifier• Complement to SS9014TO-9211. Emitter 2. Base 3. ..
SS9018 ,NPN Epitaxial Silicon TransistorSS9018SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner• High Current Gain Bandwidth Product ..
SS9018HBU ,NPN Epitaxial Silicon TransistorSS9018SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner• High Current Gain Bandwidth Product ..
ST92195B5B1 ,32-64K ROM HCMOS MCU WITH ON-SCREEN-DISPLAY AND TELETEXT DATA SLICERST92195B32-64K ROM HCMOS MCU WITHON-SCREEN-DISPLAY AND TELETEXT DATA SLICERDATA BRIEFINGn Register ..
ST92195C7T1 , 48-96 Kbyte ROM HCMOS MCU WITH ON-SCREEN DISPLAY AND TELETEXT DATA SLICER
ST92F120V1Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDST92F1208/16-BIT FLASH MCU FAMILYWITH RAM, EEPROM AND J1850 BLPDDATASHEET■ Memories– Internal Memor ..
ST92F120V1Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDapplications that require regular up-and low voltage operation for power-efficient anddates of sing ..
ST92F120V9Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDTable of Contents7.1 INTRODUCTION 947.2 CLOCK CONTROL UNIT . . 947.3 CLOCK MANAGEMENT ..
ST92F124R9T6 ,8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD
SS9014BBU-SS9014CBU
NPN Epitaxial Silicon Transistor
SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (P =450mW) T • High h and good linearity FE • Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 450 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 45 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 5 V EBO E C I Collector Cut-off Current V =50V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 50 nA EBO EB C h DC Current Gain V =5V, I =1mA 60 280 1000 FE CE C V (sat) Collector-Base Saturation Voltage I =100mA, I =5mA 0.14 0.3 CE C B V (sat) Base-Emitter Saturation Voltage I =100mA, I =5mA 0.84 1.0 V BE C B V (on) Base-Emitter On Voltage V =5V, I =2mA 0.58 0.63 0.7 V BE CE C C Output Capacitance V =10V, I =0 2.2 3.5 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =5V, I =10mA 150 270 MHz T CE C NF Noise Figure V =5V, I =0.2mA 0.9 10 dB CE C f=1KHz, R =2KΩ S h Classification FE Classification A B C D h 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 FE ©2002 Rev. A4, November 2002
