SS9012HBU ,PNP Epitaxial Silicon TransistorSS9012SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation.• High total power ..
SS9013H , 1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
SS9014B , Pre-Amplifier, Low Level & Low Noise
SS9014BBU ,NPN Epitaxial Silicon TransistorSS9014SS9014Pre-Amplifier, Low Level & Low Noise• High total power dissipation. (P =450mW)T• High h ..
SS9014CBU ,NPN Epitaxial Silicon TransistorSS9014SS9014Pre-Amplifier, Low Level & Low Noise• High total power dissipation. (P =450mW)T• High h ..
SS9014D , Pre-Amplifier, Low Level & Low Noise
ST92195B5B1 ,32-64K ROM HCMOS MCU WITH ON-SCREEN-DISPLAY AND TELETEXT DATA SLICERST92195B32-64K ROM HCMOS MCU WITHON-SCREEN-DISPLAY AND TELETEXT DATA SLICERDATA BRIEFINGn Register ..
ST92195C7T1 , 48-96 Kbyte ROM HCMOS MCU WITH ON-SCREEN DISPLAY AND TELETEXT DATA SLICER
ST92F120V1Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDST92F1208/16-BIT FLASH MCU FAMILYWITH RAM, EEPROM AND J1850 BLPDDATASHEET■ Memories– Internal Memor ..
ST92F120V1Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDapplications that require regular up-and low voltage operation for power-efficient anddates of sing ..
ST92F120V9Q7 ,8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPDTable of Contents7.1 INTRODUCTION 947.2 CLOCK CONTROL UNIT . . 947.3 CLOCK MANAGEMENT ..
ST92F124R9T6 ,8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD
SS9012HBU
PNP Epitaxial Silicon Transistor
SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (P =625mW) T • High Collector Current. (I = -500mA) C • Complementary to SS9013 • Excellent h linearity. FE TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -20 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -20 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -25V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -3V, I =0 -100 nA EBO EB C h DC Current Gain V = -1V, I = -50mA 64 120 202 FE1 CE C h V = -1V, I = -500mA 40 90 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.18 -0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I = -500mA, I = -50mA -0.95 -1.2 V BE C B V (on) Base-Emitter On Voltage V = -1V, I = -10mA -0.6 -0.67 -0.7 V BE CE C h Classification FE Classification D E F G H h 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202 FE1 ©2002 Rev. A4, November 2002
