SS8550DBU ,PNP Epitaxial Silicon TransistorSS8550SS85502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8550DBU ,PNP Epitaxial Silicon TransistorSS8550SS85502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8550DTA ,PNP Epitaxial Silicon TransistorSS8550SS85502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8550DTA ,PNP Epitaxial Silicon TransistorSS8550SS85502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8550DTA ,PNP Epitaxial Silicon TransistorSS8550SS85502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8550LT1 , PNP General Purpose Transistors
ST90R158Q6 ,8/16-BIT MICROCONTROLLER (MCU) WITH 16 TO 64K ROM, OTP OR EPROM, 512 TO 2K RAMTable of Contents4.2.1 Divide by Zero trap . 484.2.2 Segment Paging During Interrupt Routines ..
ST90T158M9LVQ1 ,8/16-BIT MICROCONTROLLER (MCU) WITH 16 TO 64K ROM, OTP OR EPROM, 512 TO 2K RAMGENERAL DESCRIPTION . . . . . . .... . ... .. .. . . .... .... .. . .... .. . .. .. . ... .. .. . . ..
ST90T158M9LVQ1 ,8/16-BIT MICROCONTROLLER (MCU) WITH 16 TO 64K ROM, OTP OR EPROM, 512 TO 2K RAMTable of Contents4.2.1 Divide by Zero trap .... .. . ... . .. .. .. . .. .. . ... .. .. .. . 484. ..
ST90T158M9Q6 ,8/16-BIT MICROCONTROLLER (MCU) WITH 16 TO 64K ROM, OTP OR EPROM, 512 TO 2K RAMST90158 - ST901358/16-BIT MCU FAMILY WITHUP TO 64K ROM/OTP/EPROM AND UP TO 2K RAM■ Register File ba ..
ST9150 ,Low-cost advanced HD decoding IC for TVapplications CPU (450 MHz)DSL/IP) worldwide. The ST-9150 is targeted at ■ 32-bit DDR1/DDR2 compatib ..
ST-9150-BUC ,Low-cost advanced HD decoding IC for TVapplications CPU, 32KI, 32KD caches:Target speed > 450 MHz delivering > 800DMIPs● Single 32-bit DDR ..
SS8550CBU-SS8550CTA-SS8550DBU-SS8550DTA
PNP Epitaxial Silicon Transistor
SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: I =1.5A C • Collector Power Dissipation: P =2W (T =25°C) C C TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -1.5 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -2mA, I =0 -25 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -6 V EBO E C I Collector Cut-off Current V = -35V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -6V, I =0 -100 nA EBO EB C h DC Current Gain V = -1V, I = -5mA 45 170 FE1 CE C h V = -1V, I = -100mA 85 160 300 FE2 CE C h V = -1V, I = -800mA 40 80 FE3 CE C V (sat) Collector-Emitter Saturation Voltage I = -800mA, I = -80mA -0.28 -0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = -800mA, I = -80mA -0.98 -1.2 V BE C B V (on) Base-Emitter on Voltage V = -1V, I = -10mA -0.66 -1.0 V BE CE C C Output Capacitance V = -10V, I =0 15 pF ob CB E f=1MHz f Current Gain Bandwidth Product V = -10V, I = -50mA 100 200 MHz T CE C h Classification FE Classification B C D h 85 ~ 160 120 ~ 200 160 ~ 300 FE2 ©2002 Rev. A2, November 2002
