SS8050DTA ,NPN Epitaxial Silicon TransistorSS8050SS80502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8050LT1 , NPN General Purpose Transistors
SS8050LT1 , NPN General Purpose Transistors
SS8550 ,PNP Epitaxial Silicon TransistorSS8550SS85502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8550C , 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
SS8550C , 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
ST890CDR ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNapplications are:Internal current limiting circuitry protects the input PCMCIA slots, Access bus sl ..
ST-8LR2 , SILICON PHOTOTRANSISTOR
ST8R00WPUR ,MICROPOWER STEP UP DC/DC CONVERTERFeatures■ Output voltage adjustable from 6 V to 12 V■ Output voltage accuracy: ± 2%■ Output current ..
ST8R00WPUR ,MICROPOWER STEP UP DC/DC CONVERTERBlock diagramFigure 1. Schematic diagramLX LXTh Ther ermal malOU OUT TIN INH HIIn nhibit hibitPG PG ..
ST901T ,HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONST901THIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON■ HIGH VOLTAGE SPECIAL DARLINGTONSTRUCTU ..
ST90R158Q6 ,8/16-BIT MICROCONTROLLER (MCU) WITH 16 TO 64K ROM, OTP OR EPROM, 512 TO 2K RAMTable of Contents4.2.1 Divide by Zero trap . 484.2.2 Segment Paging During Interrupt Routines ..
SS8050CBU-SS8050DBU-SS8050DTA
NPN Epitaxial Silicon Transistor
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: I =1.5A C • Collector Power Dissipation: P =2W (T =25°C) C C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =2mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current V =35V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =6V, I =0 100 nA EBO EB C h DC Current Gain V =1V, I =5mA 45 FE1 CE C h V =1V, I =100mA 85 300 FE2 CE C h =1V, I =800mA 40 V FE3 CE C V Collector-Emitter Saturation Voltage I =800mA, I =80mA 0.5 V CE (sat) C B Base-Emitter Saturation Voltage I =800mA, I =80mA 1.2 V V BE (sat) C B Base-Emitter On Voltage V =1V, I =10mA 1 V V BE (on) CE C Output Capacitance V =10V, I =0, f=1MHz 9.0 pF C ob CB E Current Gain Bandwidth Product V =10V, I =50mA 100 MHz f T CE C h Classification FE Classification B C D 85 ~ 160 120 ~ 200 160 ~ 300 h FE2 ©2004 Rev. B2, August 2004
