SS8050CBU ,NPN Epitaxial Silicon TransistorSS8050SS80502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8050CBU ,NPN Epitaxial Silicon TransistorSS8050SS80502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8050-D , NPN Silicon Transistors
SS8050DBU ,NPN Epitaxial Silicon TransistorSS8050SS80502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8050DTA ,NPN Epitaxial Silicon TransistorSS8050SS80502W Output Amplifier of Portable Radios in Class B Push-pull Operation.• Complimentary t ..
SS8050LT1 , NPN General Purpose Transistors
ST890B ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNapplications are:Internal current limiting circuitry protects the input PCMCIA slots, Access bus sl ..
ST890BDR ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNST8901.2A CURRENT LIMITED HIGH SIDE WITHTHERMAL SHUTDOWN■ 2.7V TO 5.5V INPUT RANGE■ PROGRAMMABLE CU ..
ST890C ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
ST890C ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNST8901.2A CURRENT LIMITED HIGH SIDE WITHTHERMAL SHUTDOWN■ 2.7V TO 5.5V INPUT RANGE■ PROGRAMMABLE CU ..
ST890CD ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNST8901.2A CURRENT LIMITED HIGH SIDE WITHTHERMAL SHUTDOWN■ 2.7V TO 5.5V INPUT RANGE■ PROGRAMMABLE CU ..
ST890CDR ,1.2 CURRENT LIMITED HIGH SIDE WITH THERMAL SHUTDOWNapplications are:Internal current limiting circuitry protects the input PCMCIA slots, Access bus sl ..
SS8050
NPN Epitaxial Silicon Transistor
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: I =1.5A C • Collector Power Dissipation: P =2W (T =25°C) C C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =2mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current V =35V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =6V, I =0 100 nA EBO EB C h DC Current Gain V =1V, I =5mA 45 135 FE1 CE C h V =1V, I =100mA 85 160 300 FE2 CE C h V =1V, I =800mA 40 110 FE3 CE C V (sat) Collector-Emitter Saturation Voltage I =800mA, I =80mA 0.28 0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I =800mA, I =80mA 0.98 1.2 V BE C B V (on) Base-Emitter On Voltage V =1V, I =10mA 0.66 1 V BE CE C C Output Capacitance V =10V, I =0 9.0 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =50mA 100 190 MHz T CE C h Classification FE Classification B C D h 85 ~ 160 120 ~ 200 160 ~ 300 FE2 ©2001 Rev. A1, July 2001
