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SPW52N50C3
for lowest Conduction Losses & fastest Switching
SPW52N50C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 247
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO247
Maximum Ratings
SPW52N50C3
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPW52N50C3
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPW52N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPW52N50C3
1 Power dissipationtot = f (TC)
50
100
150
200
250
300
350
400
500 SPW52N50C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
40
80
120
160
200
280
SPW52N50C3
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
20
40
60
80
100
120
160
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.5
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 30 A, VGS = 10 V
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32 SPW52N50C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
40
80
120
160
200
280
