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SPW24N60C3
for lowest Conduction Losses & fastest Switching
CP""''"
Infineon
lechnologies
SPW24N60C3
CooIMOSTM Power Transistor
Product Summary
Features
VDS @ Tj,max 650 V
. New revolutiona hi h volta e technolo
Ty g g gy RDS(on),max 0.16
. Ultra low gate charge l 24.3
. Periodic avalanche rated
. Extreme dv/dt rated
. Ultra low effective capacitances
. Improved transconductance
Type Package Ordering Code Marking pln 1
SPW24N60C3 P-T0247 Q67040-S464O 24N60C3 gnugce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current In Tc=25 ''C 24.3 A
Tc=100 °C 15.4
Pulsed drain current" / D,pulse Tc=25 ''C 72.9
Avalanche energy, single pulse EAS ID=12.1 A, Var--50 V 780 mJ
Avalanche energy, repetitive tAR1)'2) EAR 10:24.3 A, vDD=5o v 1.5
Avalanche current, repetitive tAR” IAR 24.3 A
. ID=24.3 A,
Drain source voltage slope dv/dt Vos=480 V, Tj=125 °C 50 V/ns
Gate source voltage VGS static +20 V
Vss AC (f>1 Hz) -+30
Power dissipation Ptot Tc=25 "C 240 W
Operating and storage temperature Ti, Tstg -55 150 "C
Rev. 1.0 page 1 2004-04-27
CP""''"
Infineon
lechnologies
SPW24N60C3
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 0.52 K/W
Thermal resistance, junction -
ambient RthJA leaded - - 62
. 1.6 mm (0.063 in.) o
Soldering temperature Tsmd from case for 10 s - - 260 C
Electrical characteristics, at Tj=25 'C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS Vss=0 V, ID=250 pA 600 - - V
Avalanche breakdown voltage V(SR)os b'ss=0 V, I D=24.3 A - 700 -
Gate threshold voltage Vegan) VDS=VGS, ID=1.2 mA 2.1 3 3.9
. VDS=6OO V, Vss=0 V,
Zero gate voltage drain current loss - o - 0.1 1 pA
Ts=25 C
VDS=6OO V, Vss=0 V,
Tj=150 'C - - 100
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - - 100 nA
V =10V,I =15.4 A,
Drain-source on-state resistance Rosmn) ls, o D - 0.14 0.16 9
Tr=25 C
VGS=10 V, ID=15.4 A,
Tr=150 "C - 0.34 -
Gate resistance Rs f=1 MHz, open drain - 0.7 -
lVrosl>2llolRDson)max,
Transconductance " lro--15.4A - 24 - s
Rev. 1.0 page 2 2004-04-27
