SPW20N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Ultra low gate chargeP-T ..
SPW20N60CFD ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.22 ΩDS(on)• New revolutionary high voltage technologyI 20.7 AD• Ultra low gate chargeP-T ..
SPW20N60S5 ,for lowest Conduction LossesFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 20 AD• Ultra low gate chargeP-TO2 ..
SPW21N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 21 AD• Ultra low gate chargeP-TO2 ..
SPW24N60C3 ,for lowest Conduction Losses & fastest SwitchingFeaturesV @ T 650 VDS j,max• New revolutionary high voltage technologyR 0.16ΩDS(on),max• Ultra low ..
SPW24N60CFD , CoolMOS Power Transistor
ST1S06APUR ,Synchronous rectification with inhibit, 1.5 A, 1.5 MHz adjustable, step-down switching regulatorFeatures■ Step-down current mode PWM (1.5 MHz) DC-DC converter■ 2% DC output voltage tolerance■ Syn ..
ST1S06PMR , Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3
ST1S06PMR , Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3
ST1S06PU33R ,Synchronous rectification with inhibit, 1.5 A, 1.5 MHz adjustable, step-down switching regulatorElectrical characteristics . . . . . 65 Typical performance characteristics . . . . 96 Typi ..
ST1S06PUR ,Synchronous rectification with inhibit, 1.5 A, 1.5 MHz adjustable, step-down switching regulatorPin configuration (top view) ST1S06AST1S06* Pin 1 is V for ADJ version and V for Fixed vers ..
ST1S06PUR ,Synchronous rectification with inhibit, 1.5 A, 1.5 MHz adjustable, step-down switching regulatorST1S06xxSynchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed oradjustable, step-down switch ..
SPW20N60C3
for lowest Conduction Losses & fastest Switching
SPW20N60C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO247
Maximum Ratings
SPW20N60C3Final data
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPW20N60C3Final data
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPW20N60C3Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPW20N60C3Final data
1 Power dissipationtot = f (TC)
20
40
60
80
100
120
140
160
180
200
240 SPW20N60C3
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
20
30
40
50
60
80
SPW20N60C3Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
35
45
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
1.2
1.3
(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
SPW20N60C3
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
20
30
40
50
60
80
