SPW11N60S5 ,for lowest Conduction LossesFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPW11N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPW11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.45 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPW12N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11.6 AD• Ultra low gate chargeP-T ..
SPW15N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 15 AD• Ultra low gate chargeP-TO2 ..
SPW16N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 16 AD• Ultra low gate chargeP-TO2 ..
ST-1MLBR2 , Photo transistors
ST1S03 ,1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6ST1S031.5A, 1.5 MHZ ADJUSTABLE,STEP-DOWN SWITCHING REGULATOR IN DFN6 STEP-DOWN CURRENT MODE PWM ( ..
ST1S03PMR ,1.5A, 1.5 MHZ ADJUSTABLE, STEP-DOWN SWITCHING REGULATOR IN DFN6applications and, generally, to replace theprotected and current limited to prevent damageshigh cur ..
ST1S03PUR ,1.5 A, 1.5 MHz adjustable, step-down switching regulatorFeatures switching frequency (1.5 MHz) allows the use of tiny surface-mount components: as well as ..
ST1S06 ,Synchronous rectification with inhibit, 1.5 A, 1.5 MHz adjustable, step-down switching regulatorapplications and, generally, to replace the high current linear solution when the power dissipation ..
ST1S06 ,Synchronous rectification with inhibit, 1.5 A, 1.5 MHz adjustable, step-down switching regulatorAbsolute maximum ratingsSymbol Parameter Value UnitV Positive power supply voltage -0.3 to 7 VIN_SW ..
SPW11N60S5
for lowest Conduction Losses
SPW11N60S5
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO247
Maximum Ratings
SPW11N60S5
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPW11N60S5
Gate Charge CharacteristicsRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPW11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPW11N60S5
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPW11N60S5
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
SPW11N60S5
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
18
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.5
DS(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPW11N60S5
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
32
