SPW11N60CFD ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.44 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPW11N60S5 ,for lowest Conduction LossesFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPW11N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPW11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.45 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPW12N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11.6 AD• Ultra low gate chargeP-T ..
SPW15N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.28 ΩDS(on)• New revolutionary high voltage technologyI 15 AD• Ultra low gate chargeP-TO2 ..
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SPW11N60CFD
for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Feature· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge
P-TO247
Maximum Ratings
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Gate Charge Characteristics1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
1 Power dissipationPtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPW11N60CFD
tot
2 Safe operating areaID = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedanceZthJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
30
40
5 Typ. output characteristicID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
22
6 Typ. drain-source on resistanceRDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
DS(on)
7 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2 SPW11N60CFD
DS(on)
8 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
15
20
25
30
40
