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SPW11N60C2
for lowest Conduction Losses & fastest Switching
SPW11N60C2Final data
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
Product SummaryP-TO247
Maximum Ratings, at TC
= 25°C, unless otherwise specified
SPW11N60C2Final data
Thermal Characteristics
Characteristics
Static Characteristics
SPW11N60C2Final data
Characteristics
Gate Charge CharacteristicsCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
SPW11N60C2Final data
Characteristics
Typical Transient Thermal Characteristics
SPW11N60C2Final data
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPW11N60C2
tot
2 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
SPW11N60C2Final data
5 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
18
6 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
0.5
DS(on)
7 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPW11N60C2
DS(on)
8 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
32
