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SPU10N10
N-Channel SIPMOS Power Transistor
Infineon
technologies
Preliminary Data
SIPMOS© Power Transistor SPD 10N10
Features Product Summary
. N channel Drain source voltage VDS 100 v
. Enhancement mode Drain-Source on-state resistance RDSM) 0.2 Q
q Avalanche rated Continuous drain current ID 10 A
o d v/dt rated
VPTOQOSW
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
SPD10N10 P-T0252 Q67040-S4119-A2 Tape and Reel G D s
SPU10N10 P-T0251 Q67040-S4111-A2 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
Tc = 25 "C 10
TC = 100 ( 6.3
Pulsed drain current IDpuIse 40
To = 25 °C
Avalanche energy, single pulse EAS 59 mJ
ID =1OA, VDD=25V,RGS=25£2
Avalanche energy, periodic limited by Timax EAR
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 10 A, VDS = 0 V, di/dt= 200 Alps
Gate source voltage VGS $20 V
Power dissipation Ptot 40 W
TC = 25 (
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
Infineon SPD10N10
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 3.1 KNV
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling areal) - - 50
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage \/(BR)DSS 100 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS Vegan) 2.1 3 4
ID = 1 mA
Zero gate voltage drain current /DSS pA
VDS=100V, VGS=0V, Tj=25°C - 0.1 1
VDs=100V, VGS=0V, Tj=125“C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(0n) n
VGS=10V,ID=6A - 0.15 0.2
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2
